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Nexperia USA Inc. PSMN1R0-40YSHX

Nexperia USA Inc. PSMN1R0-40YSHX

MPNPSMN1R0-40YSHX
Active

MOSFET N-CH 40V 290A LFPAK56

$3.42Ref. price · indicative, final on quote
PackagingSOT-1023, 4-LFPAK
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

PSMN1R0-40YSHX specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C290A (Ta)
Power dissipation333W (Ta)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
FET featureSchottky Diode (Body)
CaseSOT-1023, 4-LFPAK
Vgs(th) (Max) @ id3.6V @ 1mA
Rds on (Max) @ id, vgs1mOhm @ 25A, 10V
Gate charge (Qg) (Max) @ vgs122 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds9433 pF @ 20 V