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Nexperia USA Inc. PSMN1R0-40YLDX

Nexperia USA Inc. PSMN1R0-40YLDX

MPNPSMN1R0-40YLDX
Active

MOSFET N-CH 40V 280A LFPAK56

$2.93Ref. price · indicative, final on quote
PackagingSC-100, SOT-669
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

PSMN1R0-40YLDX specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C280A (Ta)
Power dissipation198W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseSC-100, SOT-669
Vgs(th) (Max) @ id2.2V @ 1mA
Rds on (Max) @ id, vgs1.1mOhm @ 25A, 10V
Gate charge (Qg) (Max) @ vgs127 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds8845 pF @ 20 V