Nexperia USA Inc. PSMN102-200Y,115
MPNPSMN102-200Y,115
Active
MOSFET N-CH 200V 21.5A LFPAK56
$1.22Ref. price · indicative, final on quote
PackagingSC-100, SOT-669
RoHSROHS3 Compliant
SeriesTrenchMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 200 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 21.5A (Tc) |
| Power dissipation | 113W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | SC-100, SOT-669 |
| Vgs(th) (Max) @ id | 4V @ 1mA |
| Rds on (Max) @ id, vgs | 102mOhm @ 12A, 10V |
| Gate charge (Qg) (Max) @ vgs | 30.7 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1568 pF @ 30 V |