Nexperia USA Inc. PSMN0R9-25YLDX
MPNPSMN0R9-25YLDX
Active
MOSFET N-CH 25V 300A LFPAK56
$2.4Ref. price · indicative, final on quote
PackagingSC-100, SOT-669
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 25 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 300A (Tc) |
| Power dissipation | 238W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | SC-100, SOT-669 |
| Vgs(th) (Max) @ id | 2.2V @ 1mA |
| Rds on (Max) @ id, vgs | 0.85mOhm @ 25A, 10V |
| Gate charge (Qg) (Max) @ vgs | 89.8 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 6721 pF @ 12 V |