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Nexperia USA Inc. PSMN069-100YS,115

Nexperia USA Inc. PSMN069-100YS,115

MPNPSMN069-100YS,115
Active

MOSFET N-CH 100V 17A LFPAK56

$0.65Ref. price · indicative, final on quote
PackagingSC-100, SOT-669
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

PSMN069-100YS,115 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C17A (Tc)
Power dissipation56W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseSC-100, SOT-669
Vgs(th) (Max) @ id4V @ 1mA
Rds on (Max) @ id, vgs72.4mOhm @ 5A, 10V
Gate charge (Qg) (Max) @ vgs14 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds645 pF @ 50 V