Nexperia USA Inc. PMZB350UPE,315
MPNPMZB350UPE,315
Active
MOSFET P-CH 20V 1A DFN1006B-3
$0.5Ref. price · indicative, final on quote
Packaging3-XFDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 1.8V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 1A (Ta) |
| Power dissipation | 360mW (Ta), 3.125W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Case | 3-XFDFN |
| Vgs(th) (Max) @ id | 950mV @ 250µA |
| Rds on (Max) @ id, vgs | 450mOhm @ 300mA, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 1.9 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 127 pF @ 10 V |