Nexperia USA Inc. PMZ600UNEZ
MPNPMZ600UNEZ
Active
MOSFET N-CH 20V 600MA DFN1006-3
$0.34Ref. price · indicative, final on quote
PackagingSC-101, SOT-883
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 1.2V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 600mA (Ta) |
| Power dissipation | 360mW (Ta), 2.7W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Case | SC-101, SOT-883 |
| Vgs(th) (Max) @ id | 950mV @ 250µA |
| Rds on (Max) @ id, vgs | 620mOhm @ 600mA, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 0.7 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 21.3 pF @ 10 V |