PMXB65UPEZ
Nexperia USA Inc.
MOSFET P-CH 12V 3.2A DFN1010D-3
[IN STOCK] In Stock: 192 pcs
MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 12 V |
| Drive voltage (Max rds on, min rds on) | 1.2V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 3.2A (Ta) |
| Power dissipation | 317mW (Ta), 8.33W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Case | 3-XDFN Exposed Pad |
| Vgs(th) (Max) @ id | 1V @ 250µA |
| Rds on (Max) @ id, vgs | 72mOhm @ 3.2A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 12 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 634 pF @ 6 V |
PMXB65UPEZ
[ALLOC] verified