Nexperia USA Inc. PMXB360ENEAZ
MPNPMXB360ENEAZ
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MOSFET N-CH 80V 1.1A DFN1010D-3
$0.37Ref. price · indicative, final on quote
Packaging3-XDFN Exposed Pad
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 80 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 1.1A (Ta) |
| Power dissipation | 400mW (Ta), 6.25W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Qualification | AEC-Q100 |
| Case | 3-XDFN Exposed Pad |
| Vgs(th) (Max) @ id | 2.7V @ 250µA |
| Rds on (Max) @ id, vgs | 450mOhm @ 1.1A, 10V |
| Gate charge (Qg) (Max) @ vgs | 4.5 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 130 pF @ 40 V |