Nexperia USA Inc. PMV65XP/MIR
MPNPMV65XP/MIR
Obsolete
$0.4400Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 1.8V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 2.8A (Ta) |
| Power dissipation | 480mW (Ta), 4.17W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR) |
| Vgs | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Vgs(th) (Max) @ id | 900mV @ 250µA |
| Rds on (Max) @ id, vgs | 74mOhm @ 2.8A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 7.7 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 744 pF @ 20 V |