Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 2.5V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 3.5A (Ta) |
| Power dissipation | 510mW (Ta), 4.15W (Tc) |
| Operating temperature | 150°C(TJ) |
| Package | Bulk |
| Vgs | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Vgs(th) (Max) @ id | 1.25V @ 250µA |
| Rds on (Max) @ id, vgs | 55mOhm @ 2.4A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 11 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 1000 pF @ 10 V |