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Nexperia USA Inc. PMV45EN2VL — Discrete Semiconductors

Nexperia USA Inc. PMV45EN2VL

MPNPMV45EN2VL
Active
$0.0938Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

PMV45EN2VL specifications
ParameterValue
SeriesTrenchMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C5.1A (Ta)
Power dissipation510mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs42mOhm @ 4.1A, 10V
Gate charge (Qg) (Max) @ vgs6.3 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds209 pF @ 15 V