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Nexperia USA Inc. PMV45EN2R — Discrete Semiconductors

Nexperia USA Inc. PMV45EN2R

MPNPMV45EN2R
Active

MOSFET N-CH 30V 4.1A TO236AB

$0.4500Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

PMV45EN2R Technical Specifications
ParameterValue
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C4.1A (Ta)
Power dissipation510mW (Ta), 5W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs42mOhm @ 4.1A, 10V
Gate charge (Qg) (Max) @ vgs6.3 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds209 pF @ 15 V