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Nexperia USA Inc. PMV213SN,215 — Discrete Semiconductors

PMV213SN,215 TrenchMOS N-Ch MOSFET 100V 1.9A SOT-23 — Nexperi...

MPNPMV213SN,215
Active

MOSFET N-CH 100V 1.9A TO236AB

$0.6000Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
SeriesTrenchMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

PMV213SN,215 specifications
ParameterValue
SeriesTrenchMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C1.9A (Tc)
Power dissipation280mW (Tj)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id4V @ 1mA
Rds on (Max) @ id, vgs250mOhm @ 500mA, 10V
Gate charge (Qg) (Max) @ vgs7 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds330 pF @ 20 V