Nexperia USA Inc. PMT560ENEAX
MPNPMT560ENEAX
Active
MOSFET N-CH 100V 1.1A SOT223
$0.42Ref. price · indicative, final on quote
PackagingTO-261-4, TO-261AA
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 1.1A (Ta) |
| Power dissipation | 750mW (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Qualification | AEC-Q100 |
| Case | TO-261-4, TO-261AA |
| Vgs(th) (Max) @ id | 2.7V @ 250µA |
| Rds on (Max) @ id, vgs | 715mOhm @ 1.1A, 10V |
| Gate charge (Qg) (Max) @ vgs | 4.4 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 112 pF @ 50 V |