Nexperia USA Inc. PMPB14R0EPX
MPNPMPB14R0EPX
Active
MOSFET P-CH 30V 9A DFN2020M-6
$0.55Ref. price · indicative, final on quote
Packaging6-UDFN Exposed Pad
RoHSROHS3 Compliant
SeriesTrenchMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchMOS™ |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Current - continuous drain (Id) @ 25°C | 9A (Ta) |
| Power dissipation | 1.9W (Ta), 12.5W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 6-UDFN Exposed Pad |
| Vgs(th) (Max) @ id | 2V @ 250µA |
| Rds on (Max) @ id, vgs | 16mOhm @ 8.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 40 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 227 pF @ 15 V |