Nexperia USA Inc. PMPB100XPEAX
MPNPMPB100XPEAX
Active
MOSFET P-CH 20V 3.2A 6DFN
$0.4Ref. price · indicative, final on quote
Packaging6-UDFN Exposed Pad
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 3V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 3.2A (Ta) |
| Power dissipation | 550mW (Ta) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | +8V, -10V |
| Technology | MOSFET (Metal Oxide) |
| Qualification | AEC-Q101 |
| Case | 6-UDFN Exposed Pad |
| Vgs(th) (Max) @ id | 1.25V @ 250µA |
| Rds on (Max) @ id, vgs | 122mOhm @ 3.2A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 5 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 388 pF @ 10 V |