PMPB07R3ENAX
Nexperia USA Inc. · TrenchMOS™ Series
SMALL SIGNAL MOSFET FOR MOBILE
[IN STOCK] In Stock: 49 pcs
MOQ 1 · Tape & Reel (TR) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | TrenchMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 12A (Ta) |
| Power dissipation | 1.9W (Ta), 12.5W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 6-UDFN Exposed Pad |
| Vgs(th) (Max) @ id | 2.2V @ 250µA |
| Rds on (Max) @ id, vgs | 8.6mOhm @ 12A, 10V |
| Gate charge (Qg) (Max) @ vgs | 19 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 914 pF @ 15 V |
PMPB07R3ENAX
[ALLOC] verified