Nexperia USA Inc. PMDXB600UNEZ
MPNPMDXB600UNEZ
Active
MOSFET 2N-CH 20V 0.6A 6DFN
$0.48Ref. price · indicative, final on quote
Packaging6-XFDFN Exposed Pad
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchFET® |
| FET type | 2 N-Channel (Dual) |
| Mounting | Surface Mount |
| Drain to source voltage | 20V |
| Current - continuous drain (Id) @ 25°C | 600mA |
| Power - max | 265mW |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| FET feature | Logic Level Gate |
| Case | 6-XFDFN Exposed Pad |
| Vgs(th) (Max) @ id | 950mV @ 250µA |
| Rds on (Max) @ id, vgs | 620mOhm @ 600mA, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 0.7nC @ 4.5V |
| Input capacitance (Ciss) (Max) @ vds | 21.3pF @ 10V |