PMDPB55XP,115

Nexperia USA Inc.

MOSFET 2P-CH 20V 3.4A 6HUSON

Nexperia USA Inc. PMDPB55XP,115
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

PMDPB55XP,115 specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C3.4A
Power - max490mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
Configuration2 P-Channel (Dual)
Case6-UFDFN Exposed Pad
Vgs(th) (Max) @ id900mV @ 250µA
Rds on (Max) @ id, vgs70mOhm @ 3.4A, 4.5V
Gate charge (Qg) (Max) @ vgs25nC @ 5V
Input capacitance (Ciss) (Max) @ vds785pF @ 10V
PMDPB55XP,115
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