Nexperia USA Inc. PMDPB30XN,115
MPNPMDPB30XN,115
Active
MOSFET 2N-CH 20V 4A 6HUSON
$0.54Ref. price · indicative, final on quote
Packaging6-UFDFN Exposed Pad
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | 2 N-Channel (Dual) |
| Mounting | Surface Mount |
| Drain to source voltage | 20V |
| Current - continuous drain (Id) @ 25°C | 4A |
| Power - max | 490mW |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| FET feature | Logic Level Gate |
| Case | 6-UFDFN Exposed Pad |
| Vgs(th) (Max) @ id | 900mV @ 250µA |
| Rds on (Max) @ id, vgs | 40mOhm @ 3A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 21.7nC @ 4.5V |
| Input capacitance (Ciss) (Max) @ vds | 660pF @ 10V |