PHT6NQ10T~6135
Nexperia USA Inc. PHT6NQ10T,135
MPNPHT6NQ10T,135
Active
MOSFET N-CH 100V 3A SOT223
$0.87Ref. price · indicative, final on quote
PackagingTO-261-4, TO-261AA
RoHSROHS3 Compliant
SeriesTrenchMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 3A (Ta) |
| Power dissipation | 1.8W (Ta), 8.3W (Tc) |
| Operating temperature | -65°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-261-4, TO-261AA |
| Vgs(th) (Max) @ id | 4V @ 1mA |
| Rds on (Max) @ id, vgs | 90mOhm @ 3A, 10V |
| Gate charge (Qg) (Max) @ vgs | 21 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 633 pF @ 25 V |