Skip to main content
Nexperia USA Inc. PDTC114ET/DG/B2,21 — Discrete Semiconductors

Nexperia USA Inc. PDTC114ET/DG/B2,21

MPNPDTC114ET/DG/B2,21
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

PDTC114ET/DG/B2,21 specifications
ParameterValue
SeriesAutomotive, AEC-Q101
MountingSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff1µA
DC current gain (hFE) (Min) @ ic, vce30 @ 5mA, 5V
Power - max250 mW
Frequency - transition230 MHz
PackageTape & Reel (TR)
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)10 kOhms
Resistor - emitter base (R2)10 kOhms
Vce saturation (Max) @ ib, ic150mV @ 500µA, 10mA