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Nexperia USA Inc. PDTA123EMB,315 — Discrete Semiconductors

Nexperia USA Inc. PDTA123EMB,315

MPNPDTA123EMB,315
Active
$0.0300Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

PDTA123EMB,315 specifications
ParameterValue
SeriesAutomotive, AEC-Q100
MountingSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff1µA
DC current gain (hFE) (Min) @ ic, vce30 @ 20mA, 5V
Power - max250 mW
Frequency - transition180 MHz
PackageTape & Reel (TR)
Case3-XFDFN
Resistor - base (R1)2.2 kOhms
Resistor - emitter base (R2)2.2 kOhms
Vce saturation (Max) @ ib, ic150mV @ 500µA, 10mA