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Nexperia USA Inc. PDTA113EMB,315 — Discrete Semiconductors

Nexperia USA Inc. PDTA113EMB,315

MPNPDTA113EMB,315
Active
$0.0354Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

PDTA113EMB,315 specifications
ParameterValue
MountingSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce30 @ 40mA, 5V
Power - max250 mW
Frequency - transition180 MHz
GradeAutomotive
PackageTape & Reel (TR)
QualificationAEC-Q100
Case3-XFDFN
Resistor - base (R1)1 kOhms
Resistor - emitter base (R2)1 kOhms
Vce saturation (Max) @ ib, ic150mV @ 1.5mA, 30mA