Nexperia USA Inc. GAN140-650EBEZ
MPNGAN140-650EBEZ
Active
650 V, 140 MOHM GALLIUM NITRIDE
$6.68Ref. price · indicative, final on quote
Packaging8-VDFN Exposed Pad
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount, Wettable Flank |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 6V |
| Current - continuous drain (Id) @ 25°C | 17A (Ta) |
| Power dissipation | 113W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | +7V, -1.4V |
| Technology | GaNFET (Gallium Nitride) |
| Case | 8-VDFN Exposed Pad |
| Vgs(th) (Max) @ id | 2.5V @ 17.2mA |
| Rds on (Max) @ id, vgs | 140mOhm @ 5A, 6V |
| Gate charge (Qg) (Max) @ vgs | 3.5 nC @ 6 V |
| Input capacitance (Ciss) (Max) @ vds | 125 pF @ 400 V |