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Nexperia USA Inc. BSS84,215 — Discrete Semiconductors

BSS84,215 P-CH MOSFET 50V 130mA TO-236AB — Nexperia | ICBOMS

MPNBSS84,215
Active

MOSFET P-CH 50V 130MA TO236AB

$0.3500Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSS84,215 specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage50 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C130mA (Ta)
Power dissipation250mW (Tc)
Operating temperature-65°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2V @ 1mA
Rds on (Max) @ id, vgs10Ohm @ 130mA, 10V
Input capacitance (Ciss) (Max) @ vds45 pF @ 25 V