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Nexperia USA Inc. BSS123/LF1R — Discrete Semiconductors

Nexperia USA Inc. BSS123/LF1R

MPNBSS123/LF1R
Obsolete
$0.3100Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSS123/LF1R specifications
ParameterValue
SeriesTrenchMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C150mA (Ta)
Power dissipation250mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2.8V @ 1mA
Rds on (Max) @ id, vgs6Ohm @ 120mA, 10V
Input capacitance (Ciss) (Max) @ vds40 pF @ 25 V