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Nexperia USA Inc. BSH205G2VL

Nexperia USA Inc. BSH205G2VL

MPNBSH205G2VL
Active

MOSFET P-CH 20V 2.3A TO236AB

$0.48Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSH205G2VL specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.5V, 4.5V
Current - continuous drain (Id) @ 25°C2.3A (Ta)
Power dissipation480mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id950mV @ 250µA
Rds on (Max) @ id, vgs170mOhm @ 2A, 4.5V
Gate charge (Qg) (Max) @ vgs6.5 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds418 pF @ 10 V