BSH108,215

Nexperia USA Inc. · TrenchMOS™ Series

MOSFET N-CH 30V 1.9A TO236AB

Nexperia USA Inc. BSH108,215
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[IN STOCK] In Stock: 1,975 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

BSH108,215 specifications
Parameter / AttributeSpecification / Value
SeriesTrenchMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C1.9A (Tc)
Power dissipation830mW (Tc)
Operating temperature-65°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2V @ 1mA
Rds on (Max) @ id, vgs120mOhm @ 1A, 10V
Gate charge (Qg) (Max) @ vgs10 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds190 pF @ 10 V
BSH108,215
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