Skip to main content
Nexperia USA Inc. BC856BW/DG/B2,115 — Discrete Semiconductors

Nexperia USA Inc. BC856BW/DG/B2,115

MPNBC856BW/DG/B2,115
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BC856BW/DG/B2,115 specifications
ParameterValue
MountingSurface Mount
FET typePNP
Voltage - collector emitter breakdown65 V
Current - collector (Ic)100 mA
Current - collector cutoff15nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce220 @ 2mA, 5V
Power - max200 mW
Frequency - transition100MHz
Operating temperature150°C (TJ)
PackageTape & Reel (TR)
CaseSC-70, SOT-323
Vce saturation (Max) @ ib, ic600mV @ 5mA, 100mA