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Nexperia USA Inc. BAS16LD,315 — Discrete Semiconductors

BAS16LD,315 – 100V 215mA Fast-Recovery DFN1006 Diode

MPNBAS16LD,315
Active

DIODE GP 100V 215MA DFN1006D-2

$0.2600Ref. price · indicative, final on quote
Packaging2-XDFN
RoHSROHS3 Compliant
SeriesBAS16
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BAS16LD,315 specifications
ParameterValue
SeriesBAS16
MountingSurface Mount, Wettable Flank
Voltage - DC reverse (Vr)100 V
Voltage - forward (Vf) (Max) @ if1.25 V @ 150 mA
Current - reverse leakage @ vr500 nA @ 80 V
Current - average rectified215mA
Operating temperature - junction150°C (Max)
GradeAutomotive
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyStandard
QualificationAEC-Q101
Case2-XDFN
Capacitance @ vr,1.5pF @ 0V, 1MHz
Reverse recovery time4 ns