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Nexperia USA Inc. BAS16LD,315 — Discrete Semiconductors

BAS16LD,315 – 100V 215mA Fast-Recovery DFN1006 Diode

MPNBAS16LD,315
Active

DIODE GP 100V 215MA DFN1006D-2

$0.2600Ref. price · indicative, final on quote
Packaging2-XDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

BAS16LD,315 Technical Specifications
ParameterValue
SeriesBAS16
Mounting typeSurface Mount, Wettable Flank
Voltage - DC reverse (Vr)100 V
Voltage - forward (Vf) (Max) @ if1.25 V @ 150 mA
Current - reverse leakage @ vr500 nA @ 80 V
Current - average rectified215mA
Operating temperature - junction150°C (Max)
GradeAutomotive
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyStandard
QualificationAEC-Q101
Case2-XDFN
Capacitance @ vr, f1.5pF @ 0V, 1MHz
Reverse recovery time4 ns