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Nexperia USA Inc. 2N7002BKMB,315 — Discrete Semiconductors

Nexperia USA Inc. 2N7002BKMB,315

MPN2N7002BKMB,315
Obsolete
$0.3200Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2N7002BKMB,315 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C450mA (Ta)
Power dissipation360mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case3-XFDFN
Vgs(th) (Max) @ id2.1V @ 250µA
Rds on (Max) @ id, vgs1.6Ohm @ 450mA, 10V
Gate charge (Qg) (Max) @ vgs0.6 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds50 pF @ 10 V