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Microchip Technology 1N5822US — Discrete Semiconductors

Microchip Technology 1N5822US

MPN1N5822US
Active

DIODE SCHOTTKY 40V 3A B SQ-MELF

$77.8600Ref. price · indicative, final on quote
PackagingSQ-MELF, B
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

1N5822US Technical Specifications
ParameterValue
Diode typeSchottky
Mounting typeSurface Mount
Voltage - DC reverse (Vr)40 V
Voltage - forward (Vf) (Max) @ if500 mV @ 3 A
Current - reverse leakage @ vr100 µA @ 40 V
Current - average rectified3A
Operating temperature - junction-65°C~125°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageBulk
CaseSQ-MELF, B