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MDD SI2301-3A — Discrete Semiconductors

MDD SI2301-3A

MPNSI2301-3A
Active
$0.2055Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI2301-3A specifications
ParameterValue
SeriesSOT-23
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)3.3V, 4.5V
Current - continuous drain (Id) @ 25°C3A (Ta)
Power dissipation225mW (Ta)
Operating temperature-55°C ~ 150°C
PackageTape & Reel (TR)
Vgs±10V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs90mOhm @ 3A, 4.5V
Gate charge (Qg) (Max) @ vgs6.6 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds330 pF @ 10 V