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MDD GBJ5010 — Discrete Semiconductors

MDD GBJ5010

MPNGBJ5010
Active
$3.5500Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

GBJ5010 specifications
ParameterValue
SeriesGBJ
Diode typeSingle Phase
MountingThrough Hole
Voltage - peak reverse1 kV
Voltage - forward (Vf) (Max) @ if1.1 V @ 25 A
Current - reverse leakage @ vr10 µA @ 1000 V
Current - average rectified50 A
Operating temperature-55°C ~ 150°C (TJ)
PackageBox
TechnologyStandard
Case4-SIP, GBJ