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MDD 6A10-T/B — Discrete Semiconductors

MDD 6A10-T/B

MPN6A10-T/B
Active
$0.3850Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

6A10-T/B specifications
ParameterValue
SeriesR6
MountingThrough Hole
Voltage - DC reverse (Vr)1000 V
Voltage - forward (Vf) (Max) @ if950 mV @ 6 A
Current - reverse leakage @ vr10 µA @ 1000 V
Current - average rectified6A
Operating temperature - junction-55°C ~ 150°C
SpeedStandard Recovery >500ns, > 200mA (Io)
PackageTape & Box (TB)
TechnologyStandard
CaseR-6, Axial
Capacitance @ vr,150pF @ 4V, 1MHz