Skip to main content
MDD 6A10-T/B — Discrete Semiconductors

MDD 6A10-T/B

MPN6A10-T/B
Active
$0.3850Ref. price · indicative, final on quote
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

6A10-T/B Technical Specifications
ParameterValue
SeriesR6
Mounting typeThrough Hole
Voltage - DC reverse (Vr)1000 V
Voltage - forward (Vf) (Max) @ if950 mV @ 6 A
Current - reverse leakage @ vr10 µA @ 1000 V
Current - average rectified6A
Operating temperature - junction-55°C ~ 150°C
SpeedStandard Recovery >500ns, > 200mA (Io)
PackageTape & Box (TB)
TechnologyStandard
CaseR-6, Axial
Capacitance @ vr, f150pF @ 4V, 1MHz