Inventchip IV1Q12160T4
MPNIV1Q12160T4
Active
SIC MOSFET, 1200V 160MOHM, TO-24
$18.03Ref. price · indicative, final on quote
PackagingTO-247-4
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 1200 V |
| Drive voltage (Max rds on, min rds on) | 20V |
| Current - continuous drain (Id) @ 25°C | 20A (Tc) |
| Power dissipation | 138W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | +20V, -5V |
| Technology | SiCFET (Silicon Carbide) |
| Case | TO-247-4 |
| Vgs(th) (Max) @ id | 2.9V @ 1.9mA |
| Rds on (Max) @ id, vgs | 195mOhm @ 10A, 20V |
| Gate charge (Qg) (Max) @ vgs | 43 nC @ 20 V |
| Input capacitance (Ciss) (Max) @ vds | 885 pF @ 800 V |