Inventchip IV1D12020T3
MPNIV1D12020T3
Active
SIC DIODE, 1200V 20A(10A/LEG), T
$19.17Ref. price · indicative, final on quote
PackagingTO-247-3
RoHSROHS3 Compliant
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Diode type | Silicon Carbide Schottky |
| Mounting | Through Hole |
| Voltage - DC reverse (Vr) | 1200 V |
| Voltage - forward (Vf) (Max) @ if | 1.8 V @ 20 A |
| Current - reverse leakage @ vr | 100 µA @ 1200 V |
| Current - average rectified (Io) (per diode) | 30A (DC) |
| Operating temperature - junction | -55°C ~ 175°C |
| Speed | No Recovery Time > 500mA (Io) |
| Package | Tube |
| Case | TO-247-3 |
| Diode configuration | 1 Pair Common Cathode |
| Reverse recovery time | 0 ns |