Inventchip IV1D12010O2
MPNIV1D12010O2
Active
DIODE SIL CARB 1.2KV 28A TO220-2
$10.82Ref. price · indicative, final on quote
PackagingTO-220-2
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Through Hole |
| Voltage - DC reverse (Vr) | 1200 V |
| Voltage - forward (Vf) (Max) @ if | 1.8 V @ 10 A |
| Current - reverse leakage @ vr | 50 µA @ 1200 V |
| Current - average rectified | 28A |
| Operating temperature - junction | -55°C ~ 175°C |
| Speed | No Recovery Time > 500mA (Io) |
| Package | Tube |
| Technology | SiC (Silicon Carbide) Schottky |
| Case | TO-220-2 |
| Capacitance @ vr, | 575pF @ 1V, 1MHz |
| Reverse recovery time | 0 ns |