IRFZ44E

Infineon Technologies

Infineon IRFZ44E, HEXFET® N-Channel MOSFET, 60 V Vdss, 48 A Id, 23 mOhm Rds(on) at 29 A, 10 V, 60 nC gate charge, TO-220AB, -55°C to 175°C junction.

Infineon Technologies IRFZ44E
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$1.36/ pc

Volume pricing available from 1,000+ pcs per order.

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Technical specifications

IRFZ44E specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C48A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs23mOhm @ 29A, 10V
Gate charge (Qg) (Max) @ vgs60 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1360 pF @ 25 V

Technical details

The IRFZ44E is a 60 V, 48 A N-Channel HEXFET power MOSFET in a through-hole TO-220AB package, part of Infineon's established HEXFET series.

Date-code and authenticity verification is standard practice for obsolete lots.

Package and mounting — TO-220AB

The through-hole TO-220AB package with three leads mates into a standard 0.100-inch pitch footprint. The metal tab is the drain connection; thermal pad area under the tab sets the junction-to-case thermal resistance. For high-current layouts, the source lead should be kept short to minimise parasitic inductance in the gate-drive loop.

IRFZ44E
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