IRFP150NPBF

Infineon Technologies · HEXFET® Series

IRFP150NPBF, HEXFET series, N-Channel MOSFET, 100V Vdss, 42A Id, 36mOhm Rds(on) at 23A, 10V, TO-247-3 through-hole, -55°C to 175°C junction temperature.

Infineon Technologies IRFP150NPBF
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[IN STOCK] In Stock: 17,500 pcs
$1.15/ pc

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MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRFP150NPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C42A (Tc)
Power dissipation160W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs36mOhm @ 23A, 10V
Gate charge (Qg) (Max) @ vgs110 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1900 pF @ 25 V

Technical details

It comes in a through-hole TO-247-3 package (TO-247AC variant) and is built with planar stripe technology. Typical applications include switch-mode power supplies, DC-DC converters, motor drives, and battery management circuits where 100 V blocking and moderate current are needed.

On-resistance is 36 mOhm maximum at 23 A with a 10 V gate drive. That conduction loss figure drives heatsink sizing and efficiency calculations. Gate charge is 110 nC at 10 V, which sets the gate-driver power requirement and switching speed capability.

TO-247-3 through-hole package (supplier device package TO-247AC). The large tab is the drain. Mount with a screw and thermal pad or mica insulator; torque to the manufacturer's recommended value for the package.

The IRFP150NPBF is an active, current-production part with ROHS3 compliance.

IRFP150NPBF
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