GeneSiC Semiconductor GD20 Series

2 variants · GeneSiC Semiconductor

About the GeneSiC Semiconductor GD20 Series

The GeneSiC Semiconductor GD20 Series series groups 2 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. Every variant in the range shares a common capacitance @ vr, of 737pF @ 1V, 1MHz, current - reverse leakage @ vr of 10 µA @ 1200 V and diode type of Silicon Carbide Schottky. Variants differ by case and current - average rectified, so you can match the exact case your application requires using the selection guide below. All listed GeneSiC Semiconductor GD20 Series part numbers are active and orderable.

Select a variant by

Case: TO-220-2 · TO-247-2
Current - average rectified: 39A · 42A

Shared specifications

Capacitance @ vr,: 737pF @ 1V, 1MHz
Current - reverse leakage @ vr: 10 µA @ 1200 V
Diode type: Silicon Carbide Schottky
Mounting: Through Hole
Operating temperature - junction: -55°C ~ 175°C
Package: Tube
Reverse recovery time: 0 ns
Speed: No Recovery Time > 500mA (Io)
Voltage - DC reverse (Vr): 1200 V
Voltage - forward (Vf) (Max) @ if: 1.8 V @ 20 A

Variant comparison

Parameter	GD20MPS12A	GD20MPS12H
Case	TO-220-2	TO-247-2
Current - average rectified	42A	39A

Request a quote on any GeneSiC Semiconductor GD20 Series part number and we confirm price, availability and lead time per line — including end-of-life and allocation-constrained variants.