GeneSiC Semiconductor G3R7 Series

2 variants · GeneSiC Semiconductor

About the GeneSiC Semiconductor G3R7 Series

The GeneSiC Semiconductor G3R7 Series series groups 2 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. Every variant in the range shares a common drain to source voltage of 1200 V, drive voltage (Max rds on, min rds on) of 15V and FET type of N-Channel. Variants differ by case, current - continuous drain (Id) @ 25°C and mounting, so you can match the exact case your application requires using the selection guide below. All listed GeneSiC Semiconductor G3R7 Series part numbers are active and orderable.

Select a variant by

Case: TO-247-3 · TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Current - continuous drain (Id) @ 25°C: 41A (Tc) · 42A (Tc)
Mounting: Surface Mount · Through Hole
Power dissipation: 207W (Tc) · 224W (Tc)

Shared specifications

Drain to source voltage: 1200 V
Drive voltage (Max rds on, min rds on): 15V
FET type: N-Channel
Gate charge (Qg) (Max) @ vgs: 54 nC @ 15 V
Input capacitance (Ciss) (Max) @ vds: 1560 pF @ 800 V
Operating temperature: -55°C ~ 175°C (TJ)
Package: Tube
Rds on (Max) @ id, vgs: 90mOhm @ 20A, 15V
Technology: SiCFET (Silicon Carbide)
Vgs: ±15V
Vgs(th) (Max) @ id: 2.69V @ 7.5mA

Variant comparison

Parameter	G3R75MT12J	G3R75MT12D
Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA	TO-247-3
Current - continuous drain (Id) @ 25°C	42A (Tc)	41A (Tc)
Mounting	Surface Mount	Through Hole
Power dissipation	224W (Tc)	207W (Tc)

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