GeneSiC Semiconductor G3R2 Series

2 variants · GeneSiC Semiconductor

About the GeneSiC Semiconductor G3R2 Series

The GeneSiC Semiconductor G3R2 Series series groups 2 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. Every variant in the range shares a common drain to source voltage of 1200 V, drive voltage (Max rds on, min rds on) of 15V and FET type of N-Channel. Variants differ by case, current - continuous drain (Id) @ 25°C and mounting, so you can match the exact case your application requires using the selection guide below. All listed GeneSiC Semiconductor G3R2 Series part numbers are active and orderable.

Select a variant by

Case: SOT-227-4, miniBLOC · TO-247-4
Current - continuous drain (Id) @ 25°C: 105A (Tc) · 128A (Tc)
Mounting: Chassis Mount · Through Hole
Power dissipation: 365W (Tc) · 542W (Tc)
Vgs: +20V, -10V · ±15V

Shared specifications

Drain to source voltage: 1200 V
Drive voltage (Max rds on, min rds on): 15V
FET type: N-Channel
Gate charge (Qg) (Max) @ vgs: 219 nC @ 15 V
Input capacitance (Ciss) (Max) @ vds: 5873 pF @ 800 V
Operating temperature: -55°C ~ 175°C (TJ)
Package: Tube
Rds on (Max) @ id, vgs: 24mOhm @ 60A, 15V
Technology: SiCFET (Silicon Carbide)
Vgs(th) (Max) @ id: 2.69V @ 15mA

Variant comparison

Parameter	G3R20MT12N	G3R20MT12K
Case	SOT-227-4, miniBLOC	TO-247-4
Current - continuous drain (Id) @ 25°C	105A (Tc)	128A (Tc)
Mounting	Chassis Mount	Through Hole
Power dissipation	365W (Tc)	542W (Tc)
Vgs	+20V, -10V	±15V

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