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GeneSiC Semiconductor G3R350MT12D

G3R350MT12D SiC MOSFET 1200V 11A TO-247-3 — GeneSiC | ICBOMS

MPNG3R350MT12D
Active

SIC MOSFET N-CH 11A TO247-3

$4.98Ref. price · indicative, final on quote
PackagingTO-247-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

G3R350MT12D Technical Specifications
ParameterValue
SeriesG3R™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage1200 V
Drive voltage (Max rds on, min rds on)15V
Current - continuous drain (Id) @ 25°C11A (Tc)
Power dissipation74W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±15V
TechnologySiCFET (Silicon Carbide)
CaseTO-247-3
Vgs(th) (Max) @ id2.69V @ 2mA
Rds on (Max) @ id, vgs420mOhm @ 4A, 15V
Gate charge (Qg) (Max) @ vgs12 nC @ 15 V
Input capacitance (Ciss) (Max) @ vds334 pF @ 800 V