GaNPower GPI65015DFN
MPNGPI65015DFN
Active
GANFET N-CH 650V 15A DFN 8X8
$7.5Ref. price · indicative, final on quote
PackagingDie
RoHSNot applicable
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 6V |
| Current - continuous drain (Id) @ 25°C | 15A |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Vgs | +7.5V, -12V |
| Technology | GaNFET (Gallium Nitride) |
| Case | Die |
| Vgs(th) (Max) @ id | 1.2V @ 3.5mA |
| Gate charge (Qg) (Max) @ vgs | 3.3 nC @ 6 V |
| Input capacitance (Ciss) (Max) @ vds | 116 pF @ 400 V |