Fairchild Semiconductor FQA1 Series

6 variants · Fairchild SemiconductorAll Discrete Semiconductors →

About the Fairchild Semiconductor FQA1 Series

The Fairchild Semiconductor FQA1 Series series groups 6 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. The listed variants share a common case of TO-3P-3, SC-65-3, drive voltage (Max rds on, min rds on) of 10V and FET feature of -. Variants differ by current - continuous drain (Id) @ 25°C, drain to source voltage and gate charge (Qg) (Max) @ vgs, so you can match the exact current - continuous drain (Id) @ 25°C your application requires using the selection guide below. The range mixes active and legacy part numbers, so you can source both current Fairchild Semiconductor FQA1 Series variants and discontinued ones from a single page.

Select a variant by

Current - continuous drain (Id) @ 25°C: 10A (Tc) · 15A (Tc)
Drain to source voltage: 600 V · 700 V
Gate charge (Qg) (Max) @ vgs: 57 nC @ 10 V · 90 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds: 2040 pF @ 25 V · 3630 pF @ 25 V
Package: Bulk · Tube
Power dissipation: 192W (Tc) · 300W (Tc)
Rds on (Max) @ id, vgs: 560mOhm @ 7.5A, 10V · 730mOhm @ 5A, 10V

Shared specifications

Case: TO-3P-3, SC-65-3
Drive voltage (Max rds on, min rds on): 10V
FET feature: -
FET type: N-Channel
Mounting: Through Hole
Operating temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Vgs: ±30V

Variant comparison

Parameter	FQA15N70	FQA10N60C
Current - continuous drain (Id) @ 25°C	15A (Tc)	10A (Tc)
Drain to source voltage	700 V	600 V
Gate charge (Qg) (Max) @ vgs	90 nC @ 10 V	57 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds	3630 pF @ 25 V	2040 pF @ 25 V
Package	Bulk	Tube
Power dissipation	300W (Tc)	192W (Tc)
Rds on (Max) @ id, vgs	560mOhm @ 7.5A, 10V	730mOhm @ 5A, 10V

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