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Fairchild Semiconductor SI4467DY — Discrete Semiconductors

Fairchild Semiconductor SI4467DY

MPNSI4467DY
Active

P-CHANNEL POWER MOSFET

$0.8800Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
SeriesPowerTrench®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI4467DY specifications
ParameterValue
SeriesPowerTrench®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.8V, 4.5V
Current - continuous drain (Id) @ 25°C13.5A (Ta)
Power dissipation1.2W (Ta)
Operating temperature-55°C~175°C(TJ)
PackageBulk
Vgs±8V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs8.5mOhm @ 13.5A, 4.5V
Gate charge (Qg) (Max) @ vgs120 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds8237 pF @ 10 V